New Delhi — The Defence Research and Development Organisation (DRDO) has demonstrated and implemented indigenous Gallium Nitride (GaN) semiconductor technology for high-frequency defence applications, including next-generation radars and electronic warfare systems. The development is part of India’s efforts to build domestic capability in advanced semiconductor technology.
The technology was highlighted in the Ministry of Defence’s annual report for 2025-26. It covers advanced components used to generate, amplify, receive and control high-frequency signals. Such components have applications in radar, electronic warfare, communications, intelligence, surveillance, reconnaissance and unmanned systems.
Indigenous GaN Technology for X-Band Applications
A single indigenous GaN chip measuring 3.5 × 3 mm can deliver up to 30 watts of power and operate at speeds reported to be 300 times faster than silicon. The development includes indigenous GaN Monolithic Microwave Integrated Circuit (MMIC) technology for applications up to the X-band.
The technology also includes indigenously fabricated S-band GaN High Electron-Mobility Transistor (HEMT) power bars, power amplifiers, low-noise amplifiers and switch MMICs, which have been designed, fabricated and demonstrated.
GaN is a semiconductor material suited to high-frequency and high-power applications. Its use in radar transmitters and electronic warfare systems allows the development of compact components capable of handling high-frequency signals and significant power levels.
SSPL Develops GaN and SiC Technology
The latest progress builds on work by DRDO’s Solid State Physics Laboratory (SSPL). In November 2024, the Ministry of Defence said SSPL had developed indigenous processes for manufacturing 4-inch-diameter Silicon Carbide (SiC) wafers and fabricating GaN HEMTs rated up to 150 watts and MMICs up to 40 watts for applications up to X-band frequencies.
The Ministry said GaN/SiC technology can provide improved efficiency, reduced size and weight, and enhanced performance. It identified the technology as important for future combat systems, radars, electronic warfare, communications, intelligence, reconnaissance and unmanned systems.
Limited production capability for indigenous GaN-on-SiC MMICs has also been established at the Gallium Arsenide Enabling Technology Centre (GAETEC) in Hyderabad. According to the Ministry, these multifunctional MMICs have applications in strategic systems, space, aerospace and 5G and satellite communications.
iDEX Brings Private Industry Into GaN Development
The development is also linked to the government’s Innovations for Defence Excellence (iDEX) programme. On December 1, 2023, iDEX-Defence Innovation Organisation signed its 300th contract with Agnit Semiconductors Private Limited for the design and development of advanced GaN semiconductors for next-generation wireless transmitters used in defence applications, including radars and electronic warfare jammers.
The Ministry of Defence said at the time that almost all GaN components were being imported because the technology is sensitive and cutting-edge, with exports controlled or restricted by several countries. The project aimed to design, develop and manufacture GaN components in India using indigenous technology.
The contract was signed in New Delhi by then Additional Secretary (Defence Industries Production) and Defence Innovation Organisation CEO T Natarajan with Agnit Semiconductors Private Limited. Former Defence Secretary Giridhar Aramane and senior civil and military officials were also present.
The development of indigenous GaN and SiC-based MMIC technology, together with limited production capability at GAETEC and industry participation through iDEX, is intended to strengthen India’s domestic semiconductor capability for defence and other strategic applications.
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